Semiconductor lasers are diodes which are electrically pumped. Recombination of electrons and holes created by the applied current introduces optical gain. Reflection from the ends of the crystal form an optical resonator, although the resonator can be external to the semiconductor in some designs.
Commercial laser diodes emit at wavelengths from 375 nm to 3500 nm. Low to medium power laser diodes are used in laser pointers, laser printers and CD/DVD players. Laser diodes are also frequently used to optically pump other lasers with high efficiency. The highest power industrial laser diodes, with power up to 20 kW, are used in industry for cutting and welding. External-cavity semiconductor lasers have a semiconductor active medium in a larger cavity. These devices can generate high power outputs with good beam quality, wavelength-tunable narrow-linewidth radiation, or ultrashort laser pulses.
In 2012, Nichia and OSRAM developed and manufactured commercial high-power green laser diodes (515/520 nm), which compete with traditional diode-pumped solid-state lasers.
Vertical cavity surface-emitting lasers (VCSELs) are semiconductor lasers whose emission direction is perpendicular to the surface of the wafer. VCSEL devices typically have a more circular output beam than conventional laser diodes. As of 2005, only 850 nm VCSELs are widely available, with 1300 nm VCSELs beginning to be commercialized,[39] and 1550 nm devices an area of research. VECSELs are external-cavity VCSELs. Quantum cascade lasers are semiconductor lasers that have an active transition between energy sub-bands of an electron in a structure containing several quantum wells.
The development of a silicon laser is important in the field of optical computing. Silicon is the material of choice for integrated circuits, and so electronic and silicon photonic components (such as optical interconnects) could be fabricated on the same chip. Unfortunately, silicon is a difficult lasing material to deal with, since it has certain properties which block lasing. However, recently teams have produced silicon lasers through methods such as fabricating the lasing material from silicon and other semiconductor materials, such as indium(III) phosphide or gallium(III) arsenide, materials which allow coherent light to be produced from silicon. These are called hybrid silicon laser. Recent developments have also shown the use of monolithically integrated nanowire lasers directly on silicon for optical interconnects, paving the way for chip level applications. These heterostructure nanowire lasers capable of optical interconnects in silicon are also capable of emitting pairs of phase-locked picosecond pulses with a repetition frequency up to 200 GHz, allowing for on-chip optical signal processing. Another type is a Raman laser, which takes advantage of Raman scattering to produce a laser from materials such as silicon.
Lasing without maintaining the medium excited into a population inversion was demonstrated in 1992 in sodium gas and again in 1995 in rubidium gas by various international teams. This was accomplished by using an external maser to induce "optical transparency" in the medium by introducing and destructively interfering the ground electron transitions between two paths, so that the likelihood for the ground electrons to absorb any energy has been cancelled.
